| PART |
Description |
Maker |
| HVV0405-175-EK |
UHF Pulsed Power Transistor 400-500 MHz, 300μs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications
|
HVVi Semiconductors, Inc.
|
| AMFW-7S-122128-100P2 AMFW-7S-117128-65B AMFW-5S-12 |
8000 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
9600 MHz - 9800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11700 MHz - 12750 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
7200 MHz - 7800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11400 MHz - 12200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| SIL12-1A31-71M SIL12-1A31-71MDE |
SIL Reed Relays
(deutsch) SIL Reed Relay
|
Meder Electronic
|
| SIL24-1A75-71M SIL24-1A75-71MDE |
SIL Reed Relays
(deutsch) SIL Reed Relay
|
Meder Electronic
|
| SIL24-1A75-71Q SIL24-1A75-71QDE |
SIL Reed Relays
(deutsch) SIL Reed Relay
|
Meder Electronic
|
| ANP1800M2-23 L735A L1300 ANP2300M12-10 |
1700 MHz - 1800 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER HERMETIC SEALED, CASE S003
735 MHz - 765 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1215 MHz - 1365 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2200 MHz - 2300 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
Sumida, Corp.
|
| MRF10120 |
MICROWAVE POWER TRANSISTOR NPN SILICON
MICROWAVE POWER TRANSISTORS
|
Tyco Electronics
|
| PHI214-0851 PH1214-0.85L |
Radar Pulsed Power Transistor, 0.85W, 2ms Pulse, 20% Duty 1.2 - 1.4 GHz
1200-1400 MHz,0.85 W, 2 ms pulse,radar pulsed power transistor
|
Tyco Electronics
MA-Com
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 3-28-109 3-05-109 3-10-109 3-08-109 3-04-109 3-03- |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
Fixed Attenuators 18325 GHz 固定衰减18325千兆
33000 MHz - 50000 MHz RF/MICROWAVE FIXED ATTENUATOR
40000 MHz - 60000 MHz RF/MICROWAVE FIXED ATTENUATOR
18000 MHz - 26500 MHz RF/MICROWAVE FIXED ATTENUATOR
220000 MHz - 325000 MHz RF/MICROWAVE FIXED ATTENUATOR
|
TE Connectivity, Ltd.
|
